发明授权
- 专利标题: Method of manufacturing silicon-based thin-film photoelectric conversion device
- 专利标题(中): 硅基薄膜光电转换装置的制造方法
-
申请号: US09390085申请日: 1999-09-03
-
公开(公告)号: US06265288B1公开(公告)日: 2001-07-24
- 发明人: Yoshifumi Okamoto , Masashi Yoshimi
- 申请人: Yoshifumi Okamoto , Masashi Yoshimi
- 优先权: JP10-289138 19981012; JP10-349714 19981209; JP11-050147 19990226; JP11-050148 19990226
- 主分类号: H01L2120
- IPC分类号: H01L2120
摘要:
A method of fabricating a silicon-based thin-film photoelectric conversion device, where a plasma CVD process is used to deposit a polycrystalline photoelectric conversion layer. During the deposition of the photoelectric conversion layer, the temperature of the underlying layer is less than 550° C., the pressure in the plasma chamber is more than 5 Torr, and the ratio of the flow rates of a hydrogen gas and a silane-type gas is more than 50. In addition, one of the following operations is carried out during the deposition to change the relevant parameters between the start and end of the deposition. First, the distance between the plasma discharge electrodes is increased gradually or in steps. Second, the pressure of the reaction chamber is increased gradually or in steps. Third, the flow rate of the silane-type gas is increased gradually. Fourth, the plasma discharge power density is reduced gradually or in steps.