发明授权
US06265327B1 Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method
失效
在半导体衬底表面上形成绝缘膜的方法和用于实施该方法的装置
- 专利标题: Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method
- 专利标题(中): 在半导体衬底表面上形成绝缘膜的方法和用于实施该方法的装置
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申请号: US09098352申请日: 1998-06-17
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公开(公告)号: US06265327B1公开(公告)日: 2001-07-24
- 发明人: Hikaru Kobayashi , Kenji Yoneda
- 申请人: Hikaru Kobayashi , Kenji Yoneda
- 优先权: JP9-164513 19970620
- 主分类号: H01L2131
- IPC分类号: H01L2131
摘要:
Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.