The semiconductor memory device includes a power supply voltage (Vcc) applied to the semiconductor device, a row controller for generating an output signal in response to a control signal representing one of a normal operation state and a stand-by state, and a plurality of row decoders connected between the row controller and a plurality of word lines. Each row decoder activates a corresponding word line in response to the output signal from the row controller and a row address signal from an external source, and the output signal of the row controller is a high voltage or a ground voltage when the plurality of row decoders are in a normal operation state or in a stand-by state, respectively. The semiconductor memory device also includes a column controller for generating an output signal in response to a first control signal representing one of a normal operation state and a stand-by state and a plurality of column decoders connected between the column controller and a plurality of column selection lines. Each column decoder activates a corresponding column selection line in response to the output signal from the column controller, a column address signal, and a second control signal, and the output signal of the column controller is an internal supply voltage or the ground voltage when the plurality of column decoders are in a normal operation state or in a stand-by state, respectively. The semiconductor memory device does not generate leakage current in a stand-by state.