发明授权
US06271148B1 Method for improved remote microwave plasma source for use with substrate processing system
失效
用于改善用于衬底处理系统的远程微波等离子体源的方法
- 专利标题: Method for improved remote microwave plasma source for use with substrate processing system
- 专利标题(中): 用于改善用于衬底处理系统的远程微波等离子体源的方法
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申请号: US09416861申请日: 1999-10-13
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公开(公告)号: US06271148B1公开(公告)日: 2001-08-07
- 发明人: Chien-Teh Kao , Kenneth Tsai , Quyen Pham , Ronald L. Rose , Calvin R. Augason , Joseph Yudovsky
- 申请人: Chien-Teh Kao , Kenneth Tsai , Quyen Pham , Ronald L. Rose , Calvin R. Augason , Joseph Yudovsky
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.