- 专利标题: Semiconductor light emitting device and its manufacturing method
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申请号: US09006233申请日: 1998-01-13
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公开(公告)号: US06274890B1公开(公告)日: 2001-08-14
- 发明人: Hiroaki Oshio , Iwao Matsumoto , Tsuguo Uchino , Hiroshi Nagasawa , Tadashi Umegi , Satoshi Komoto
- 申请人: Hiroaki Oshio , Iwao Matsumoto , Tsuguo Uchino , Hiroshi Nagasawa , Tadashi Umegi , Satoshi Komoto
- 优先权: JP9-017370 19970115
- 主分类号: H01L3300
- IPC分类号: H01L3300
摘要:
A semiconductor light emitting device includes a semiconductor light emitting element (1), a resin stem (10) having a recess (7), and a projection (9) made of a light-transmissive thermosetting resin on the resin stem so as to cover the entire upper surface and continuous upper part of side surfaces of the resin stem to a predetermined depth. The recess is filled with a light-transmissive resin encapsulating element (5) to embed the semiconductor light emitting element, one end of an externally extended first lead (21) and one end of an externally extended second lead (22) electrically connected to first and second electrodes of the semiconductor light emitting element, and a bonding wires (4) connecting the second lead to the second electrode. The projection functions as a lens and is made by hardening a fluid-state resin in an encapsulating case mold. Since the projection extends over the upper surface and upper part of side surfaces continuous from the upper surface, it is firmly bonded to the resin stem with a high adherability.
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