发明授权
- 专利标题: Semiconductor device having optimized input/output cells
- 专利标题(中): 具有优化的输入/输出单元的半导体器件
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申请号: US08679566申请日: 1996-07-15
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公开(公告)号: US06281529B1公开(公告)日: 2001-08-28
- 发明人: Masatoshi Watanabe
- 申请人: Masatoshi Watanabe
- 优先权: JP7-283955 19951031
- 主分类号: H01L2710
- IPC分类号: H01L2710
摘要:
A semiconductor device includes cell areas laid out along a periphery of the device. A plurality of transistors are formed in each cell area, and are separated into at least three transistor groups arranged in a direction perpendicular to a circumferential direction of the semiconductor device. Each transistor group is connected to a high-potential power supply or a low-potential power supply. The semiconductor device has at least one interconnection line common to both the transistor group connected to the high-potential power supply and the transistor group connected to the low-potential power supply. The interconnection line serves to connect those transistor groups to external pads.
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