发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09105024申请日： 1998-06-26
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公开(公告)号： US06284583B1公开(公告)日： 2001-09-04
- 发明人: Shigehiko Saida , Yoshitaka Tsunashima
- 申请人： Shigehiko Saida , Yoshitaka Tsunashima
- 优先权： JP9-174681 19970630; JP10-167092 19980615
- 主分类号： H01L218249
- IPC分类号： H01L218249
摘要：
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.
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