发明授权
- 专利标题： Method of forming a shallow groove isolation structure
- 专利标题（中）： 形成浅槽隔离结构的方法
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申请号： US09434308申请日： 1999-11-05
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公开(公告)号： US06284625B1公开(公告)日： 2001-09-04
- 发明人: Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
- 申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
- 优先权： JP10-317777 19981109
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0
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