发明授权
- 专利标题: Semiconductor laser device
- 专利标题(中): 半导体激光器件
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申请号: US09163395申请日: 1998-09-30
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公开(公告)号: US06285699B1公开(公告)日: 2001-09-04
- 发明人: Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
- 申请人: Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
- 优先权: JP9-266830 19970930
- 主分类号: H01S500
- IPC分类号: H01S500
摘要:
On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.