发明授权
US06287746B1 Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
失效
化学放大抗蚀剂的透明度和曝光光的敏感性大于248纳米波长和形成掩模的工艺
- 专利标题： Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
- 专利标题（中）： 化学放大抗蚀剂的透明度和曝光光的敏感性大于248纳米波长和形成掩模的工艺
-
申请号： US09036219申请日： 1998-03-06
-
公开(公告)号： US06287746B1公开(公告)日： 2001-09-11
- 发明人: Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
- 申请人： Kaichiro Nakano , Katsumi Maeda , Shigeyuki Iwasa , Etsuo Hasegawa
- 优先权： JP9-052678 19970307; JP10-038207 19980220
- 主分类号： G03F7004
- IPC分类号： G03F7004
摘要：
Monomers expressed by the following general formula are polymerized so as to obtain polymer, and the polymer and photoacid generator is dissolved in solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. wherein R1 represents a hydrogen atom or a methyl group, R2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R3 represents a hydrogen atom, a methyl group or an acetyl group.
信息查询
