Process for forming a combination hardmask and antireflective layer

发明授权

US06287951B1 Process for forming a combination hardmask and antireflective layer 有权

标题翻译：用于形成组合硬掩模和抗反射层的工艺

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专利标题： Process for forming a combination hardmask and antireflective layer
专利标题（中）： 用于形成组合硬掩模和抗反射层的工艺
申请号： US09206715

申请日： 1998-12-07
公开(公告)号： US06287951B1

公开(公告)日： 2001-09-11
发明人: Kevin D. Lucas , Christopher D. Pettinato , Wayne D. Clark , Stanley M. Filipiak , Yeong Jyh Lii
申请人： Kevin D. Lucas , Christopher D. Pettinato , Wayne D. Clark , Stanley M. Filipiak , Yeong Jyh Lii
主分类号： H01L214763
IPC分类号： H01L214763

Process for forming a combination hardmask and antireflective layer

摘要：

A hardmask layer (34) is formed over insulating layers (26, 24, 22 and 20), and an antireflective layer (36) is formed overlying the hardmask layer (34). A resist layer (38) is formed overlying the antireflective layer (36), and an opening is formed in the resist layer to expose a surface portion of the antireflective layer (36). The exposed surface portion of the antireflective layer (36) and portions of the hardmask layer (34) are etched to expose a surface portion of the insulating layers (26, 24, 22 and 20), and a feature opening (61) is formed in the insulating layers (26, 24, 22 and 20). A conductive material (74) is deposited to fill the feature opening (61), and portions of the conductive material (74) lying outside the opening are removed.

摘要（中）：

在绝缘层（26,24,22和20）上形成硬掩模层（34），并且形成覆盖在硬掩模层（34）上的抗反射层（36）。在抗反射层（36）上形成抗蚀剂层（38），在抗蚀剂层上形成开口以露出抗反射层（36）的表面部分。对抗反射层（36）的暴露表面部分和硬掩模层（34）的部分进行蚀刻以暴露绝缘层（26,24,22和20）的表面部分，形成特征开口（61）在绝缘层（26,24,22和20）中。沉积导电材料（74）以填充特征开口（61），并且去除位于开口外侧的导电材料（74）的部分。

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