发明授权
- 专利标题： Electron beam-writing apparatus and electron beam-writing method
- 专利标题（中）： 电子束写入装置和电子束写入方法
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申请号： US08918165申请日： 1997-08-25
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公开(公告)号： US06288407B1公开(公告)日： 2001-09-11
- 发明人: Katsuyuki Itoh
- 申请人： Katsuyuki Itoh
- 优先权： JP8-230370 19960830
- 主分类号： H01L21027
- IPC分类号： H01L21027
摘要：
An electron beam-writing apparatus comprising a first beam-shaping aperture means and a second beam-shaping aperture means, wherein the first and/or second beam-shaping aperture means has an aperture(s) of a shape(s) corresponding to the desired patterns to be written on a semiconductor substrate; and an electron beam-writing method of improved throughput using the apparatus.
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