Invention Grant
- Patent Title: High accuracy comparator
- Patent Title (中): 高精度比较器
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Application No.: US09436073Application Date: 1999-11-08
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Publication No.: US06288666B1Publication Date: 2001-09-11
- Inventor: Morteza Afghahi , Yueming He
- Applicant: Morteza Afghahi , Yueming He
- Main IPC: H03M136
- IPC: H03M136

Abstract:
An embodiment of the invention is directed to a metal oxide semiconductor field effect transistor (MOSFET) comparator, which includes a differential amplifier having first and second inputs and first and second outputs. A first offset storage device is connected to the first input at one end and receives a first input signal of the comparator at another end. A second offset storage device is connected to the second input at one end and receives the first input signal during an autozero time interval and a second input signal of the comparator thereafter. During the autozero time interval, offset voltages are stored. Thereafter, the offsets are cancelled when the input signals are applied to their respective storage device. In a particular embodiment of the invention, the amplifier features a dual purpose load that causes the amplifier to first preamplify and then regeneratively drives the outputs.
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