发明授权
- 专利标题： GaN related compound semiconductor light-emitting device
- 专利标题（中）： GaN相关化合物半导体发光器件
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申请号： US08979346申请日： 1997-11-26
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公开(公告)号： US06291840B1公开(公告)日： 2001-09-18
- 发明人: Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
- 申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
- 优先权： JP8-334956 19961129; JP9-019748 19970117; JP9-047064 19970214
- 主分类号： H01L3300
- IPC分类号： H01L3300
摘要：
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.