发明授权
US06291840B1 GaN related compound semiconductor light-emitting device 失效
GaN相关化合物半导体发光器件

GaN related compound semiconductor light-emitting device
摘要:
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
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