发明授权
- 专利标题： Oxide thin film
- 专利标题（中）： 氧化物薄膜
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申请号： US09350914申请日： 1999-07-12
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公开(公告)号： US06294274B1公开(公告)日： 2001-09-25
- 发明人: Hiroshi Kawazoe , Hideo Hosono , Atsushi Kudo , Hiroshi Yanagi
- 申请人： Hiroshi Kawazoe , Hideo Hosono , Atsushi Kudo , Hiroshi Yanagi
- 优先权： JP10-342364 19981116
- 主分类号： C01G302
- IPC分类号： C01G302
摘要：
An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.
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