发明授权
US06294443B1 Method of epitaxy on a silicon substrate comprising areas heavily doped with boron
有权
在硅衬底上外延的方法，包括重掺杂硼的区域
- 专利标题： Method of epitaxy on a silicon substrate comprising areas heavily doped with boron
- 专利标题（中）： 在硅衬底上外延的方法，包括重掺杂硼的区域
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申请号： US09407345申请日： 1999-09-29
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公开(公告)号： US06294443B1公开(公告)日： 2001-09-25
- 发明人: Didier Dutartre , Patrick Jerier
- 申请人： Didier Dutartre , Patrick Jerier
- 优先权： FR9812755 19981007
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A method of vapor phase epitaxy deposition of silicon on a silicon substrate on or in which exist areas containing dopants at high concentration, among which is boron, while avoiding a selfdoping of the epitaxial layer by boron, including the step of introducing a chlorinated gas, before the epitaxial deposition step, to etch the substrate across a thickness smaller than 100 nm.
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