发明授权
- 专利标题: GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same
- 专利标题(中): GaAs单晶及其制造方法以及利用其的半导体器件
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申请号: US08108499申请日: 1993-08-18
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公开(公告)号: US06297523B1公开(公告)日: 2001-10-02
- 发明人: Yoshihisa Fujisaki , Yukio Takano , Tsutomu Ishiba
- 申请人: Yoshihisa Fujisaki , Yukio Takano , Tsutomu Ishiba
- 优先权: JP59-202262 19841005
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4×10−5 and the density of Si atoms contained in the GaAs single crystal is set to at most 1×1016 cm−3, whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.