A diode structure compatible with silicide processes for electrostatic discharge protection is disclosed. The diode structure comprises a semiconductor layer of a first conductivity type, a diffusion region of a second conductivity type formed in the semiconductor layer, and a doped region of the second conductivity type formed in the semiconductor layer around the diffusion region. The doped region has a doping concentration less than that of the diffusion region to provide a ballastic resistance under a high current stressing condition.