Invention Grant
US06298001B1 Semiconductor memory device enabling direct current voltage test in package status 失效
半导体存储器件,可实现封装状态下的直流电压测试

  • Patent Title: Semiconductor memory device enabling direct current voltage test in package status
  • Patent Title (中): 半导体存储器件,可实现封装状态下的直流电压测试
  • Application No.: US08636428
    Application Date: 1996-04-23
  • Publication No.: US06298001B1
    Publication Date: 2001-10-02
  • Inventor: Seung-hun LeeTae-jin Kim
  • Applicant: Seung-hun LeeTae-jin Kim
  • Priority: KR95-9642 19950424
  • Main IPC: G11C1700
  • IPC: G11C1700
Semiconductor memory device enabling direct current voltage test in package status
Abstract:
A semiconductor memory device for a package-state voltage test has a plurality of bonding pads that are electrically connected to an external device in a package state, at least one internal DC voltage generator, at least one switch connected between one of the bonding pads and the internal DC voltage generator. The switch is on during a test mode and is off during a normal mode. The switch controller is connected between at least two of the plurality of bonding pads and serves to control the switch in response to an external switching signal in the test mode. Because of this design, a number of DC voltage tests can be performed without increasing chip size since a general control pad also serves as a DC voltage test pad.
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