发明授权
- 专利标题： Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof
- 专利标题（中）： 一种制造半导体器件的方法，包括用于形成非晶硅层的步骤，接着进行结晶
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申请号： US09069170申请日： 1998-04-29
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公开(公告)号： US06300217B1公开(公告)日： 2001-10-09
- 发明人: Masaki Kuramae , Fumitake Mieno
- 申请人： Masaki Kuramae , Fumitake Mieno
- 优先权： JP5-229196 19930914
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.
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