Invention Grant
US06301179B1 Self-equalized low power precharge sense amp for high speed SRAMs
有权
用于高速SRAM的自平衡低功率预充电检测放大器
- Patent Title: Self-equalized low power precharge sense amp for high speed SRAMs
- Patent Title (中): 用于高速SRAM的自平衡低功率预充电检测放大器
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Application No.: US09570064Application Date: 2000-05-12
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Publication No.: US06301179B1Publication Date: 2001-10-09
- Inventor: David C. Lawson
- Applicant: David C. Lawson
- Main IPC: G11C700
- IPC: G11C700

Abstract:
In a sense amplifier for reading out memory cells of a memory comprising a set of P-FETs and N-FETs, complementary input signals received from the memory cell being read out are applied to input junctions connected to gates of N-FETs. The input junctions are charged to 0.8 volts by a precharging circuit comprising P-FETs connecting the input junctions to ground and an N-FET shunting the input junctions together. The P-FETs and N-FETs of the precharging circuit are rendered conductive between memory cells readouts to precharge the input junctions and are rendered nonconducting during memory cell readouts. A second precharging circuit precharges an output junction of the sense amplifier circuit. The output junction is connected to an output amplification stage including a CMOS circuit. Because of the low equalization voltage to which the input junctions are precharged, the time to precharge the input junctions is dramatically reduced and a reduction in the memory access time is achieved.
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