发明授权
- 专利标题： Process for preparing semiconductor device
- 专利标题（中）： 制备半导体器件的工艺
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申请号： US08479855申请日： 1995-06-07
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公开(公告)号： US06303499B1公开(公告)日： 2001-10-16
- 发明人: Yasue Sato
- 申请人： Yasue Sato
- 优先权： JP2-144611 19900601
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A process for preparing a semiconductor device includes a step of surface-modifying a desired portion of the surface of a substrate carried out in an atmosphere containing oxygen or nitrogen atoms. The process also includes a step of depositing selectively a metal on an electron-donative surface provided corresponding to the desired portion.
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