发明授权
- 专利标题： Method for forming dot element
- 专利标题（中）： 形成点元素的方法
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申请号： US09208753申请日： 1998-12-10
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公开(公告)号： US06303516B1公开(公告)日： 2001-10-16
- 发明人: Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
- 申请人： Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
- 优先权： JP9-342386 19971212
- 主分类号： H01L2146
- IPC分类号： H01L2146
摘要：
A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.
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