发明授权
US06303973B1 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same
有权
具有大电流容量的功率晶体管和使用该功率晶体管的半导体集成电路器件
- 专利标题： Power transistor having large electric current capacity and semiconductor integrated circuit device using the same
- 专利标题（中）： 具有大电流容量的功率晶体管和使用该功率晶体管的半导体集成电路器件
-
申请号： US09404002申请日： 1999-09-23
-
公开(公告)号： US06303973B1公开(公告)日： 2001-10-16
- 发明人: Eiji Nakagawa , Seiichi Yamamoto
- 申请人： Eiji Nakagawa , Seiichi Yamamoto
- 优先权： JP10-272818 19980928
- 主分类号： H01L27082
- IPC分类号： H01L27082
摘要：
A power transistor comprising a collector region formed in a semiconductor substrate, a base region formed within the collector region, and a hoop-shaped emitter region formed within the base region. The hoop-shaped emitter region divides the base region into an external section and at least one internal section surrounded by the emitter region on the substrate surface, the external and internal base sections being connected within the substrate. A base contact is formed on the surface of each internal base section surrounded by the emitter region. By this design, the electric current is more uniform within the emitter region, and safe operating area (SOA) destruction can be prevented. The invention is also directed to semiconductor integrated circuit devices using the above power transistor, and a method of forming the same.
信息查询
