发明授权
US06311545B1 Anhydrous zinc antimonate semiconductor gas sensor and method for producing the same 失效
无水锑酸锌半导体气体传感器及其制造方法

  • 专利标题: Anhydrous zinc antimonate semiconductor gas sensor and method for producing the same
  • 专利标题(中): 无水锑酸锌半导体气体传感器及其制造方法
  • 申请号: US09265878
    申请日: 1999-03-11
  • 公开(公告)号: US06311545B1
    公开(公告)日: 2001-11-06
  • 发明人: Jun TamakiIsao OtaHideo Sakata
  • 申请人: Jun TamakiIsao OtaHideo Sakata
  • 优先权: JP10-059430 19980311
  • 主分类号: G01N2712
  • IPC分类号: G01N2712
Anhydrous zinc antimonate semiconductor gas sensor and method for producing the same
摘要:
A sensor for detecting a gas comprises a gas detecting portion comprising an anhydrous zinc antimonate semiconductor. The sensor for detecting a gas is preferably hydrogen sulfide. A method for producing the sensor for detecting a gas comprising the steps of: mixing a zinc compound with colloidal antimony oxide in a ZnO/Sb2O5 molar ratio of 0.8 to 1.2; calcining the mixture at 300 to 680° C. and grinding the mixture to form electroconductive anhydrous zinc antimonate powder; preparing a sol of the electroconductive anhydrous zinc antimonate; coating the sol of the electroconductive anhydrous zinc antimonate on a substrate of a device; and heating the substrate at a temperature exceeding 680° C., but below 1,000° C.
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