发明授权
- 专利标题： Polishing apparatus
- 专利标题（中）： 抛光设备
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申请号： US09494656申请日： 2000-01-31
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公开(公告)号： US06312321B1公开(公告)日： 2001-11-06
- 发明人: Dai Fukushima , Hiroyuki Yano , Gaku Minamihaba
- 申请人： Dai Fukushima , Hiroyuki Yano , Gaku Minamihaba
- 优先权： JP12-016951 20000126
- 主分类号： B24B100
- IPC分类号： B24B100
摘要：
The CMP apparatus including a polishing pad having functional groups charged at an opposite polarity to that of the abrasives in the slurry, on its surface is used, so as to eliminate unnecessary Cu film (Cu wiring) and TaN film (barrier metal film) present outside the damascene wiring, by polishing.