发明授权
- 专利标题: Thin film deposition of mixed metal oxides
- 专利标题(中): 复合金属氧化物的薄膜沉积
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申请号: US09533428申请日: 2000-03-23
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公开(公告)号: US06312565B1公开(公告)日: 2001-11-06
- 发明人: Sudhanshu Misra , Pradip Kumar Roy
- 申请人: Sudhanshu Misra , Pradip Kumar Roy
- 主分类号: C01D100
- IPC分类号: C01D100
摘要:
Tantalum and niobium aluminate mixed metal oxides may be made by a process comprising mixing a first metal compound selected from the group consisting of aluminum alkoxide, aluminum beta-diketonate, aluminum alkoxide beta-diketonate, and mixtures thereof with a second metal compound selected from the group consisting of niobium alkoxide, niobium beta-diketonate, niobium alkoxide beta-diketonate, tantalum alkoxide, tantalum beta-diketonate, tantalum alkoxide beta-diketonate, and mixtures thereof to provide a precursor and then hydrolyzing the mixture. The resulting mixed metal oxide may be used in a variety of components of integrated circuits.