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发明授权
US06315883B1 Electroplanarization of large and small damascene features using diffusion barriers and electropolishing 有权
使用扩散屏障和电解抛光的大型和小型镶嵌特征的电平面化

  • 专利标题： Electroplanarization of large and small damascene features using diffusion barriers and electropolishing
  • 专利标题（中）： 使用扩散屏障和电解抛光的大型和小型镶嵌特征的电平面化
  • 申请号： US09412837
    申请日： 1999-10-05
  • 公开(公告)号： US06315883B1
    公开(公告)日： 2001-11-13
  • 发明人: Steven T. Mayer , Robert J. Contolini
  • 申请人： Steven T. Mayer , Robert J. Contolini
  • 主分类号： C25D502
  • IPC分类号： C25D502
Electroplanarization of large and small damascene features using diffusion barriers and electropolishing
摘要：
A disclosed electroplanarization process involves “masking” certain regions of a wafer surface during electropolishing. The regions chosen for masking are features of relatively low aspect ratio (i.e., features that are wider than they are deep). The masking is accomplished with a material of relatively low ionic conductivity, which effectively slows or blocks transport of the metal ions produced during electropolishing. Examples of masking materials include concentrated phosphoric acid and certain polymers.
摘要（中）：

所公开的电平面化方法涉及在电解抛光期间“掩蔽”晶片表面的某些区域。 选择用于掩蔽的区域是相对低的纵横比的特征（即，比它们更深的特征）。 掩蔽是用离子电导率相对较低的材料完成的，这有效地减慢或阻止了电解抛光过程中产生的金属离子的传输。 掩蔽材料的实例包括浓磷酸和某些聚合物。

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