The present invention discloses a method for forming metal silicide on an electronic structure by first depositing a metal layer on top of a silicon layer of polysilicon, single crystal silicon or amorphous silicon capable of forming a metal silicide, and then irradiating the metal layer with laser energy for a sufficient length of time such that a layer of metal silicide is formed at the metal interface with polysilicon, single crystal silicon and amorphous silicon. The unreacted metal layer on the metal silicide is then removed by a wet dipping method by selecting a suitable etchant for the metal. The present invention novel method can be applied to various metallic materials such as Ti, Co, W, Pt, Hf, Ta, Mo, Pd and Cr. The laser source utilized is a pulse Excimer laser of XeCl, ArF or XeF.