发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US09301354申请日: 1999-04-29
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公开(公告)号: US06320229B1公开(公告)日: 2001-11-20
- 发明人: Toshitaka Uchikoba , Masahiko Sakagami , Akihiro Yamamoto
- 申请人: Toshitaka Uchikoba , Masahiko Sakagami , Akihiro Yamamoto
- 优先权: JP10-134826 19980518; JP11-102344 19990409
- 主分类号: H01L2974
- IPC分类号: H01L2974
摘要:
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage is applied to the second high-concentration layer. A conductive layer provides an electrical connection between the first high-concentration layer and an input pad for inputting an input signal to an input circuit or input/output circuit. A first low-concentration layer of the second conductivity type is formed in the region of the semiconductor substrate immediately underlying the first high-concentration layer.
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