发明授权
US06320810B1 Semiconductor memory device allowing reduction in current consumption 有权
半导体存储器件允许降低电流消耗

  • 专利标题: Semiconductor memory device allowing reduction in current consumption
  • 专利标题(中): 半导体存储器件允许降低电流消耗
  • 申请号: US09659832
    申请日: 2000-09-11
  • 公开(公告)号: US06320810B1
    公开(公告)日: 2001-11-20
  • 发明人: Takashi KonoKatsuyoshi Mitsui
  • 申请人: Takashi KonoKatsuyoshi Mitsui
  • 优先权: JP11-261835P 19990916
  • 主分类号: G11C700
  • IPC分类号: G11C700
Semiconductor memory device allowing reduction in current consumption
摘要:
A through-current Ic of a comparator circuit is switched in accordance with a response speed required with respect to a current consumption. Additionally, a through-current Is of a shifter circuit, which sends to the comparator circuit an output signal at an appropriate level transmitting a difference between an internal power supply potential Vdd and a reference potential Vref is switched according to the required response speed. When a device is in a standby state requiring a small current consumption in internal power supply potential Vdd, both through-currents Ic and Is are set small so that the whole current consumption can be further reduced.
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