A process for fabricating a semiconductor device includes the formation of a hard-mask using lithographic techniques, followed by an oxidation process to reduce the lateral dimension of the hard-mask. The oxidation process is carried out by selectively oxidizing an oxidizable layer overlying an etch-stop layer. Upon completion of the oxidation process, the etch-stop layer is removed and a residual layer of oxidizable material is then used as a mask for the formation of a device component. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.