A semiconductor device comprising a semiconductor substrate including an electronic element such as a MOSFET, interlayer dielectric (silicon oxide layer or BPSG layer) formed on the semiconductor substrate, a through-hole formed in the interlayer dielectric, a barrier layer formed on a surface of the interlayer dielectric and on a surface of the through-hole, and a metal wiring layer formed on the barrier layer. The metal wiring layer contains aluminum as its major component and 0.1 wt % to 3 wt % of beryllium. An aluminum alloy can be embedded in the through-hole without creation of any void or breaking of wire, and the semiconductor device is highly resistant to electro-migration.