发明授权
US06329124B1 Method to produce high density memory cells and small spaces by using nitride spacer
有权
通过使用氮化物间隔物生产高密度存储单元和小空间的方法
- 专利标题： Method to produce high density memory cells and small spaces by using nitride spacer
- 专利标题（中）： 通过使用氮化物间隔物生产高密度存储单元和小空间的方法
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申请号： US09320417申请日： 1999-05-26
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公开(公告)号： US06329124B1公开(公告)日： 2001-12-11
- 发明人: Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton
- 申请人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton
- 主分类号： G03F726
- IPC分类号： G03F726
摘要：
The present invention relates to a method for forming an etch mask. A photoresist layer is patterned, wherein d1 is a smallest space dimension of an exposed area of a layer underlying the photoresist layer. An ARC layer under the photoresist layer is etched. A nitride layer is formed to be conformal to the patterned ARC layer and exposed portions of an underlayer underying the patterned ARC layer. The nitride layer is etched to form nitride sidewalls, the nitride sidewalls reducing the smallest space dimension of the exposed underlayer area to d2, wherein d2
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