发明授权
US06333229B1 Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure
失效
制造具有不对准栅极结构的场效应晶体管（FET）的方法
- 专利标题： Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure
- 专利标题（中）： 制造具有不对准栅极结构的场效应晶体管（FET）的方法
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申请号： US09523839申请日： 2000-03-13
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公开(公告)号： US06333229B1公开(公告)日： 2001-12-25
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A viable T-gate FET is produced even when the cap of the “T” is mis-aligned from the stem of the “T”. A subtractive etch is used to selectively etch the material forming the cap of the T-gate and the material forming the stem of the T-gate in order to avoid the etching away of portions of the stem if the cap is mis-aligned relative to the stem. To that end, germanium (Ge) may be used as the material for the cap of the T-gate and poly silicon (polySi) may be used as the material for the stem of the T-gate. Since germanium can be etched selectively relative to silicon from 10:1 to as much as 20:1, the cap of the T can be formed without appreciable damage to the stem portion and thus without damage to the resultant FET device.