发明授权
- 专利标题: Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer
- 专利标题(中): 使用锗氧化物牺牲层将掺杂剂引入半导体器件的方法
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申请号: US09469137申请日: 1999-12-21
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公开(公告)号: US06333245B1公开(公告)日: 2001-12-25
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma , Donald W. Rakowski
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma , Donald W. Rakowski
- 主分类号: H01L2122
- IPC分类号: H01L2122
摘要:
A method for introducing dopants into a semiconductor device using doped germanium oxide is disclosed. The method includes using rapid thermal anneal (RTA) or furnace anneal to diffuse dopants into a substrate from a doped germanium oxide sacrificial layer on the semiconductor substrate. After annealing to diffuse the dopants into the substrate, the germanium oxide sacrificial layers is removed using water thereby avoiding removal of silicon dioxide (SiO2) in the gates or in standard device isolation structures, that may lead to device failure. N+ and p+ sources and drains can be formed in appropriate wells in a semiconductor substrate, using a singular anneal and without the need to define more than one region of the first doped sacrificial layer. Alternatively, annealing before introducing a second dopant into the germanium oxide sacrificial layer give slower diffusing ions such as arsenic a head start.