Invention Grant
US06333670B1 Semiconductor device capable of stably generating internal voltage with low supply voltage
失效
能够以低电源电压稳定地产生内部电压的半导体装置
- Patent Title: Semiconductor device capable of stably generating internal voltage with low supply voltage
- Patent Title (中): 能够以低电源电压稳定地产生内部电压的半导体装置
-
Application No.: US09456521Application Date: 1999-12-08
-
Publication No.: US06333670B1Publication Date: 2001-12-25
- Inventor: Takashi Kono , Takeshi Hamamoto
- Applicant: Takashi Kono , Takeshi Hamamoto
- Priority: JP11-162084 19990609
- Main IPC: G05F110
- IPC: G05F110
Abstract:
Change in internal voltage on an internal voltage line is detected as discharging current of a capacitance element via an MOS transistor to change a charged voltage of the capacitance element. According to the charged voltage of the capacitance element, a current drive transistor is driven to supply a current to the internal voltage line. The internal voltage is stably generated with low current consumption and small occupation area.
Information query
