发明授权
- 专利标题： Method for forming conductive line of semiconductor device
- 专利标题（中）： 形成半导体器件导线的方法
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申请号： US09592438申请日： 2000-06-12
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公开(公告)号： US06335297B1公开(公告)日： 2002-01-01
- 发明人: Chang Hee Han , Byung Hak Lee
- 申请人： Chang Hee Han , Byung Hak Lee
- 优先权： KR99-22579 19990616
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
Method for forming a conductive line of a semiconductor device which has a high thermal stability and low electrical resistance includes the steps of forming an insulating layer on a semiconductor substrate, sequentially forming a semiconductor layer and a tungsten film on the insulating layer, nitrifying the tungsten film with heat treatment, and selectively etching the tungsten film and the semiconductor layer.
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