发明授权
US06335534B1 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
失效
离子注入装置，离子发生装置和具有离子注入工艺的半导体制造方法
- 专利标题： Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
- 专利标题（中）： 离子注入装置，离子发生装置和具有离子注入工艺的半导体制造方法
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申请号： US09291967申请日： 1999-04-15
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公开(公告)号： US06335534B1公开(公告)日： 2002-01-01
- 发明人: Kyoichi Suguro , Atsushi Murakoshi , Katsuya Okumura
- 申请人： Kyoichi Suguro , Atsushi Murakoshi , Katsuya Okumura
- 优先权： JP10-107693 19980417; JP11-074851 19990319
- 主分类号： H01J37317
- IPC分类号： H01J37317
摘要：
An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used wit each ion implantation step.