发明授权
US06335536B1 Method and apparatus for low voltage plasma doping using dual pulses
失效
使用双脉冲的低电压等离子体掺杂的方法和装置
- 专利标题： Method and apparatus for low voltage plasma doping using dual pulses
- 专利标题（中）： 使用双脉冲的低电压等离子体掺杂的方法和装置
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申请号： US09427872申请日： 1999-10-27
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公开(公告)号： US06335536B1公开(公告)日： 2002-01-01
- 发明人: Matthew J. Goeckner , Ziwei Fang
- 申请人： Matthew J. Goeckner , Ziwei Fang
- 主分类号： H01G37317
- IPC分类号： H01G37317
摘要：
A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.
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