- 专利标题: Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge
-
申请号: US09749485申请日: 2000-12-26
-
公开(公告)号: US06335630B1公开(公告)日: 2002-01-01
- 发明人: Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
- 申请人: Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
- 主分类号: G01R3126
- IPC分类号: G01R3126
摘要:
A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
公开/授权文献
- US20010000651A1 Contactless total charge measurement with corona 公开/授权日:2001-05-03
信息查询