发明授权
- 专利标题: Transmission gate
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申请号: US09699488申请日: 2000-10-31
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公开(公告)号: US06335653B1公开(公告)日: 2002-01-01
- 发明人: Hiroshi Shigehara , Masanori Kinugasa , Toshinobu Hisamoto
- 申请人: Hiroshi Shigehara , Masanori Kinugasa , Toshinobu Hisamoto
- 优先权: JP9-107601 19970424
- 主分类号: H03K301
- IPC分类号: H03K301
摘要:
Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor (N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.