Invention Grant
- Patent Title: Method for fabricating a semiconductor capacitor
- Patent Title (中): 半导体电容器的制造方法
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Application No.: US09208452Application Date: 1998-12-10
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Publication No.: US06337173B2Publication Date: 2002-01-08
- Inventor: Tean-Sen Jen , Shiou-Yu Wang , Jia-Shyong Cheng
- Applicant: Tean-Sen Jen , Shiou-Yu Wang , Jia-Shyong Cheng
- Main IPC: G03F726
- IPC: G03F726

Abstract:
A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.
Public/Granted literature
- US20010008742A1 METHOD FOR FABRICATING A SEMICONDUCTOR CAPACITOR Public/Granted day:2001-07-19
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