发明授权
- 专利标题: Method of fabricating a copper capping layer
- 专利标题(中): 铜覆盖层的制造方法
-
申请号: US09304436申请日: 1999-04-03
-
公开(公告)号: US06339025B1公开(公告)日: 2002-01-15
- 发明人: Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
- 申请人: Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
A method of fabricating a copper capping layer. A silicon rich nitride layer is formed on an exposed copper layer. Since the silicon rich nitride layer has more dangling bonds inside, the silicon in the silicon rich nitride layer easily reacts with the copper and a copper silicide layer is formed between the copper and the silicon rich nitride layer. Therefore, adhesion of the copper and the silicon rich nitride layer can be improved.
信息查询