发明授权
US06339233B1 Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
失效
具有掺杂半导体衬底的金属包脊波导（“MCRW”）激光半导体结构
- 专利标题： Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
- 专利标题（中）： 具有掺杂半导体衬底的金属包脊波导（“MCRW”）激光半导体结构
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申请号： US08940600申请日： 1997-09-30
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公开(公告)号： US06339233B1公开(公告)日： 2002-01-15
- 发明人: Alfred Lell
- 申请人： Alfred Lell
- 优先权： DE19640003 19960927
- 主分类号： H01L310328
- IPC分类号： H01L310328
摘要：
A semiconductor device comprises an electrically conductive III-V semiconductor substrate which has mutually opposite first and second main surfaces. At least one pn junction, reverse biased during operation of the semiconductor device, is disposed above the first main surface. At least one functional semiconductor structure is disposed above the at least one pn junction. The functional semiconductor structure is electrically insulated from the second main surface of the III-V semiconductor substrate.
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