A method for manufacturing a silicon single crystal. In this method, silicon material melting is performed in a furnace having an internal pressure between 60 and 400 mbar. The subsequent single crystal pulling is performed in a furnace having an internal pressure which is lower than the pressure when the silicon material is molten, but not exceeding 95 mbar. This method prevents production of a defective single crystal which results from the formation of pinholes, prevents dislocation of the single crystal which results from bubbles and impurities present in silicon melting solution, and prevents dislocation of the single crystal which results from evaporation of the SiO.