发明授权
- 专利标题: Photovoltaic element
- 专利标题(中): 光伏元件
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申请号: US09340464申请日: 1999-06-28
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公开(公告)号: US06344608B2公开(公告)日: 2002-02-05
- 发明人: Toshimitsu Kariya , Masafumi Sano , Yutaka Nishio
- 申请人: Toshimitsu Kariya , Masafumi Sano , Yutaka Nishio
- 优先权: JP10-183884 19980630
- 主分类号: H01L310216
- IPC分类号: H01L310216
摘要:
A photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface is provided. The sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is lowest at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with decreased reduction even when exposed to an intense light for a long period.
公开/授权文献
- US20020002992A1 PHOTOVOLTAIC ELEMENT 公开/授权日:2002-01-10
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