Invention Grant
- Patent Title: Amplifier-type solid-state image sensor device
- Patent Title (中): 放大器型固态图像传感器装置
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Application No.: US09407847Application Date: 1999-09-29
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Publication No.: US06344666B1Publication Date: 2002-02-05
- Inventor: Tetsuya Yamaguchi , Hisanori Ihara , Hiroaki Ishiwata , Akiko Mori
- Applicant: Tetsuya Yamaguchi , Hisanori Ihara , Hiroaki Ishiwata , Akiko Mori
- Priority: JP10-320589 19981111
- Main IPC: H01L3100
- IPC: H01L3100

Abstract:
In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.
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