发明授权
US06344675B1 SOI-MOS field effect transistor with improved source/drain structure and method of forming the same
失效
具有改善的源极/漏极结构的SOI-MOS场效应晶体管及其形成方法
- 专利标题： SOI-MOS field effect transistor with improved source/drain structure and method of forming the same
- 专利标题（中）： 具有改善的源极/漏极结构的SOI-MOS场效应晶体管及其形成方法
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申请号： US09591506申请日： 2000-06-12
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公开(公告)号： US06344675B1公开(公告)日： 2002-02-05
- 发明人: Kiyotaka Imai
- 申请人： Kiyotaka Imai
- 优先权： JP9-072913 19970326
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
The present invention provides a source/drain structure formed in a semiconductor layer which has source and drain regions of a first conductivity type and a body portion of a second conductivity type disposed between said source and drain regions. The body portion is positioned under a gate insulation film over which a gate electrode is provided. The source region has a first low resistive region which is lower in electrical resistivity than said source region and said drain region having a second low resistive region which is lower in electrical resistively than said source region. For the first present invention, it is important that a distance of an inside edge portion of the first low resistive region from a first interface between the source region and the body portion is shorter than a distance of an inside portion of the second low resistive region from a second interface between the drain region and the body portion.
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